Vapor deposition system and method of operating

ABSTRACT

A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/025,133 filed Feb. 10, 2011 entitled VAPOR DEPOSITION SYSTEM, whichis a continuation-in-part of U.S. Ser. No. 11/693,067, entitled VAPORDEPOSITION SYSTEM AND METHOD OF OPERATING, filed Mar. 29, 2007 and nowabandoned. The entire content of these applications are hereinincorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to a system for thin film deposition, andmore particularly to a system for depositing a thin film using a vapordeposition process.

2. Description of Related Art

During material processing, such as semiconductor device manufacturingfor production of integrated circuits (ICs), vapor deposition is acommon technique to form thin films, as well as to form conformal thinfilms over and within complex topography, on a substrate. Vapordeposition processes can include chemical vapor deposition (CVD) andplasma enhanced CVD (PECVD). For example, in semiconductormanufacturing, such vapor deposition processes may be used for gatedielectric film formation in front-end-of-line (FEOL) operations, andlow dielectric constant (low-k) or ultra-low-k, porous or non-porous,dielectric film formation and barrier/seed layer formation formetallization in back-end-of-line (BEOL) operations, as well ascapacitor dielectric film formation in DRAM production.

In a CVD process, a continuous stream of film precursor vapor isintroduced to a process chamber containing a substrate, wherein thecomposition of the film precursor has the principal atomic or molecularspecies found in the film to be formed on the substrate. During thiscontinuous process, the precursor vapor is chemisorbed on the surface ofthe substrate while it thermally decomposes and reacts with or withoutthe presence of an additional gaseous component that assists thereduction of the chemisorbed material, thus, leaving behind the desiredfilm.

In a PECVD process, the CVD process further includes plasma that isutilized to alter or enhance the film deposition mechanism. Forinstance, plasma excitation can allow film-forming reactions to proceedat temperatures that are significantly lower than those typicallyrequired to produce a similar film by thermally excited CVD. Inaddition, plasma excitation may activate film-forming chemical reactionsthat are not energetically or kinetically favored in thermal CVD.

Other CVD techniques include hot-filament CVD (otherwise known ashot-wire CVD or pyrolytic CVD). In hot-filament CVD, a film precursor isthermally decomposed by a resistively heated filament, and the resultingfragmented molecules adsorb and react on the surface of the substrate toleave the desired film. Unlike PECVD, hot-filament CVD does not requireformation of plasma.

SUMMARY OF THE INVENTION

A system is provided for depositing a thin film using chemical vapordeposition (CVD).

Furthermore, a system is provided for depositing a thin film usingpyrolytic CVD, whereby a resistive heating element is utilized topyrolize a film forming composition.

According to one embodiment, a system for depositing a thin film on asubstrate using a vapor deposition process is described. The depositionsystem includes a process chamber having a vacuum pumping systemconfigured to evacuate the process chamber, a substrate holder coupledto the process chamber and configured to support the substrate, a gasdistribution system coupled to the process chamber and configured tointroduce a film forming composition to a process space in the vicinityof a surface of the substrate, a non-ionizing heat source separate fromthe substrate holder that is configured to receive a flow of the filmforming composition and to cause thermal fragmentation of one or moreconstituents of the film forming composition when heated, and one ormore power sources coupled to the heating element array and configuredto provide an electrical signal to the at least one heating elementzone. The deposition system further includes a remote source coupled tothe process chamber and configured to supply a reactive composition tothe process chamber to chemically interact with the substrate, whereinthe remote source comprises a remote plasma generator, a remote radicalgenerator, a remote ozone generator, or a water vapor generator, or acombination of two or more thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1A depicts a schematic view of a deposition system according to anembodiment;

FIG. 1B depicts a schematic view of a deposition system according toanother embodiment;

FIG. 2A depicts a gas distribution system according to an embodiment;

FIG. 2B depicts a top view of a gas distribution plate according toanother embodiment;

FIG. 2C depicts a top view of a gas distribution plate according toanother embodiment;

FIG. 2D depicts a top view of a gas distribution plate according toanother embodiment;

FIG. 2E depicts an exploded view of an opening in a member of a gasdistribution system according to another embodiment;

FIG. 2F depicts an exploded view of an opening in a member of a gasdistribution system according to yet another embodiment;

FIG. 3 depicts a gas distribution system according to anotherembodiment;

FIG. 4A depicts a gas distribution system according to anotherembodiment;

FIG. 4B depicts a gas distribution system according to anotherembodiment;

FIG. 5 depicts a gas distribution system according to anotherembodiment;

FIG. 6 depicts a gas distribution system according to anotherembodiment;

FIG. 7 provides a cross-sectional view of a resistive film heatingelement according to an embodiment;

FIG. 8A provides a top view of a gas heating device according to anembodiment;

FIG. 8B provides a top view of a gas heating device according to anotherembodiment;

FIG. 8C provides a top view of a heating element according to anembodiment;

FIG. 8D provides a side view of the heating element shown in FIG. 8C;

FIG. 9 provides a schematic cross-sectional view of a gas distributionsystem according to an embodiment; and

FIG. 10 illustrates a method of depositing a thin film on a substrateaccording to yet another embodiment.

DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS

In the following description, in order to facilitate a thoroughunderstanding and for purposes of explanation and not limitation,specific details are set forth, such as a particular geometry of thedeposition system and descriptions of various components. However, itshould be understood that the invention may be practiced in otherembodiments that depart from these specific details.

Referring now to the drawings, wherein like reference numerals designateidentical or corresponding parts throughout the several views, FIGS. 1Aand 1B schematically illustrate a deposition system (1, 1′) fordepositing a thin film, such as a conductive film, a non-conductivefilm, or a semi-conductive film. For example, the thin film can includea dielectric film, such as a low dielectric constant (low-k) orultra-low-k dielectric film. Deposition system (1, 1′) can include achemical vapor deposition (CVD) system, whereby a film formingcomposition is thermally activated or decomposed in order to form a filmon a substrate. For example, the deposition system (1, 1′) comprises apyrolytic CVD system.

The deposition system (1, 1′) comprises a process chamber 10 having asubstrate holder 20 configured to support a substrate 25, upon which thethin film is formed. Furthermore, the substrate holder is configured tocontrol the temperature of the substrate at a temperature suitable forthe film forming reactions.

The process chamber 10 is coupled to a film forming composition deliverysystem 30 configured to introduce a film forming composition to theprocess chamber 10 through a gas distribution system 40. Furthermore, aheat source 45 is coupled to the gas distribution system 40 andconfigured to chemically modify the film forming composition. The heatsource 45 comprises one or more heating elements 55 disposed on aninterior surface of the gas distribution system 40 or embedded withinthe gas distribution system 40 or both, and a power source 50 that iscoupled to the one or more heating elements 55 and that is configured todeliver electrical power to the one or more heating elements 55. Forexample, the one or more heating elements 55 can comprise one or moreresistive heating elements. When electrical current flows through andeffects heating of the one or more resistive heating elements, theinteraction of these heated elements with the film forming compositioncauses pyrolysis of one or more constituents of the film formingcomposition.

The process chamber 10 is further coupled to a vacuum pumping system 60through a duct 62, wherein the vacuum pumping system 60 is configured toevacuate the process chamber 10 and the gas distribution system 40 to apressure suitable for forming the thin film on the substrate 25 andsuitable for pyrolysis of the film forming composition.

The film forming composition delivery system 30 can include one or morematerial sources configured to introduce a film forming composition tothe gas distribution system 40. For example, the film formingcomposition may include one or more gases, or one or more vapors formedin one or more gases, or a mixture of two or more thereof. The filmforming composition delivery system 30 can include one or more gassources, or one or more vaporization sources, or a combination thereof.Herein vaporization refers to the transformation of a material (normallystored in a state other than a gaseous state) from a non-gaseous stateto a gaseous state. Therefore, the terms “vaporization,” “sublimation”and “evaporation” are used interchangeably herein to refer to thegeneral formation of a vapor (gas) from a solid or liquid precursor,regardless of whether the transformation is, for example, from solid toliquid to gas, solid to gas, or liquid to gas.

When the film forming composition is introduced to the gas distributionsystem 40, one or more constituents of the film forming composition aresubjected to pyrolysis by the heat source 45 described above. The filmforming composition can include film precursors that may or may not befragmented by pyrolysis in the gas distribution system 40. The filmprecursor or precursors may include the principal atomic or molecularspecies of the film desired to be produced on the substrate.Additionally, the film forming composition can include a reducing agentthat may or may not be fragmented by pyrolysis in the gas distributionsystem 40. The reducing agent or agents may assist with the reduction ofa film precursor on substrate 25. For instance, the reducing agent oragents may react with a part of or all of the film precursor onsubstrate 25. Additionally yet, the film forming composition can includea polymerizing agent that may or may not be fragmented by pyrolysis inthe gas distribution system 40. The polymerizing agent may assist withthe polymerization of a film precursor or fragmented film precursor onsubstrate 25.

According to one example, when forming a copolymer thin film onsubstrate 25, a film forming composition comprising two or more monomergases is introduced to the gas distribution system 40 and is exposed tothe heat source 45, i.e., the one or more heating elements 55, having atemperature sufficient to pyrolyze one or more of the monomers andproduce a source of reactive species. These reactive species areintroduced to and distributed within process space 33 in the vicinity ofthe upper surface of substrate 25. Substrate 25 is maintained at atemperature lower than that of the heat source 45 in order to condensateand induce polymerization of the chemically altered film formingcomposition at the upper surface of substrate 25. As another example,when forming a fluorocarbon-organosilicon copolymer, monomer gases of afluorocarbon precursor and organosilicon precursor are used.

Further yet, the film forming composition can include an initiator thatmay or may not be fragmented by pyrolysis in the gas distribution system40. An initiator or fragmented initiator may assist with thefragmentation of a film precursor, or the polymerization of a filmprecursor. The use of an initiator can permit higher deposition rates atlower heat source temperatures. For instance, the one or more heatingelements can be used to fragment the initiator to produce radicalspecies of the initiator (i.e., a fragmented initiator) that arereactive with one or more of the remaining constituents in the filmforming composition. Furthermore, for instance, the fragmented initiatoror initiator radicals can catalyze the formation of radicals of the filmforming composition. For example, when forming afluorocarbon-organosilicon copolymer, the initiator can beperfluorooctane sulfonyl fluoride (PFOSF) used in the polymerization ofa cyclic vinylmethylsiloxane, such as1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3).

According to one embodiment, the film forming composition deliverysystem 30 can include a first material source 32 configured to introduceone or more film precursors to the gas distribution system 40, and asecond material source 34 configured to introduce a (chemical) initiatorto the gas distribution system 40. Furthermore, the film formingcomposition delivery system 30 can include additional gas sourcesconfigured to introduce an inert gas, a carrier gas or a dilution gas.For example, the inert gas, carrier gas or dilution gas can include anoble gas, i.e., He, Ne, Ar, Kr, Xe, or Rn.

Referring now to FIG. 2A, a gas distribution system 100 is illustratedaccording to an embodiment. The gas distribution system 100 comprises ahousing 140 configured to be coupled to or within a process chamber of adeposition system (such as process chamber 10 of deposition system (1,1′) in FIGS. 1A and 1B), and a gas distribution plate 141 configured tobe coupled to the housing 140, wherein the combination form a plenum142. The gas distribution system 100 may be thermally insulated from theprocess chamber, or it may not be thermally insulated from the processchamber. The gas distribution system 100 is configured to receive andprovide a film forming composition into the plenum 142 from a filmforming composition delivery system 130 and distribute the film formingcomposition in a process space 133 of the process chamber. For example,the gas distribution system 100 can be coupled to the film formingcomposition delivery system 130 using a first gas supply line 131configured to provide one or more constituents of a film formingcomposition 132 and a second supply line 135 configured to provide anoptional initiator 134 into plenum 142 from the film forming compositiondelivery system 130. The one or more constituents of the film formingcomposition 132 and the optional initiator 134 may be introduced toplenum 142 separately as shown, or they may be introduced through thesame supply line. The gas distribution plate 141 comprises a pluralityof openings 144 (e.g., flow channels or conduits) arranged to introduceand distribute the film forming composition from plenum 142 to theprocess space 133 proximate a substrate (not shown) upon which a film isto be formed. For example, gas distribution plate 141 comprises a lowersurface 146 configured to face the upper surface of a substrate. Theplurality of openings 144 may include one or more orifices, one or morenozzles, or one or more slots, or a combination thereof.

Furthermore, the gas distribution system 100 comprises a heat sourcehaving one or more heating elements 152 coupled to a power source 150.The one or more heating elements 152 are disposed on at least oneinterior surface of the gas distribution system 100, such that they mayinteract with any constituent of the film forming composition, or all ofthe constituents of the film forming composition including the optionalinitiator. For example, the one or more heating elements 152 may beformed on an upper surface of the gas distribution plate 141.Additionally, for example, the one or more heating elements 152 cancomprise one or more resistive heating elements. When the power source150 couples electrical power to the one or more heating elements 152,the one or more heating elements 152 may be elevated to a temperaturesufficient to pyrolize one or more constituents of the film formingcomposition. Power source 150 may include a direct current (DC) powersource, or it may include an alternating current (AC) power source.

The one or more openings 144 formed in gas distribution plate 141 caninclude one or more orifices or one or more slots or a combinationthereof. The one or more openings 144 can include a plurality oforifices distributed on the gas distribution plate 141 in a rectilinearpattern. Alternatively, the one or more openings 144 can include aplurality of orifices distributed on the gas distribution plate 141 in acircular pattern (e.g., orifices are distributed in a radial directionor angular direction or both). When the one or more heating elements 152are disposed on the upper surface of the gas distribution plate 141,each heating element can be positioned such that it does not overlapwith an opening, or it can be positioned such that it does overlap withan opening and the opening is formed there through. For example, arectilinear distribution of openings 144 may be used while each heatingelement 152 takes a serpentine-like path on gas distribution plate 141as illustrated in FIG. 2B. Alternatively, for example, a circulardistribution of openings 144′ may be used while each heating element152′ takes a spiral-like path on gas distribution plate 141′ asillustrated in FIG. 2C.

Additionally, the plurality of openings 144 can be distributed invarious density patterns on the gas distribution plate 141. For example,more openings can be formed near the center of the gas distributionplate 141 and fewer openings can be formed near the periphery of the gasdistribution plate 141. Alternatively, for example, more openings can beformed near the periphery of the gas distribution plate 141 and feweropenings can be formed near the center of the gas distribution plate141. Additionally yet, the size of the openings can vary on the gasdistribution plate 141. For example, larger openings can be formed nearthe center of the gas distribution plate 141 and smaller openings can beformed near the periphery of the gas distribution plate 141.Alternatively, for example, smaller openings can be formed near theperiphery of the gas distribution plate 141 and larger openings can beformed near the center of the gas distribution plate 141.

As illustrated in FIG. 2D, the one or more heating elements comprise aplurality of heating elements. For example, the plurality of heatingelements include an inner heating element 152A and an outer heatingelement 152B coupled to a surface of a gas distribution plate 141″having a plurality of openings 144″. In this example, the inner heatingelement 252A and the outer heating element 252B are concentric. However,the arrangement of the heating elements on the interior of the gasdistribution system can be arbitrary and tailored for optimum processresults. Power from a power source (not shown) may be coupled to theplurality of heating elements in series or in parallel or a combinationthereof.

As described above, the one or more heating elements 152 are disposed onat least one interior surface of the gas distribution system 100, suchthat they may interact with any constituent of the film formingcomposition, or all of the constituents of the film forming compositionincluding the optional initiator. An interior surface on the gasdistribution system 100 can include any surface on the gas distributionsystem 100. As shown in FIG. 2A, an interior surface can include theupper surface of gas distribution plate 141. However, the interiorsurface can further include a surface on housing 140 or within plenum142 that interacts with the film forming composition, or an internalsurface of the inlet lines that provide the film forming composition 132and the optional initiator 134 into plenum 142. Additionally, the one ormore heating elements can be formed within any component of the gasdistribution system 100 including, for example, the housing 140 and thegas distribution plate 141.

Furthermore, as illustrated in FIGS. 2E and 2F, the one or more heatingelements can be coupled to a surface of the plurality of openings formedin gas distribution plate. For example, as illustrated in FIG. 2E, aheating element 1152 can be disposed on a surface of an opening 1144formed in gas distribution plate 1141. Alternatively, for example, asillustrated in FIG. 2F, a heating element 1252 can be partially disposedon a surface of an opening 1244 formed in gas distribution plate 1241,as well as partially on an upper surface of gas distribution plate 1241and/or a lower surface of gas distribution plate 1241 (not shown).

Referring now to FIG. 3, a gas distribution system 200 is illustratedaccording to another embodiment. The gas distribution system 200comprises a housing 240 configured to be coupled to or within a processchamber of a deposition system (such as process chamber 10 of depositionsystem (1, 1′) in FIGS. 1A and 1B), and a gas distribution plate 241configured to be coupled to the housing 240. The gas distribution system200 may be thermally insulated from the process chamber, or it may notbe thermally insulated from the process chamber. Additionally, gasdistribution system 200 comprises an intermediate gas distribution plate260 coupled to housing 240 such that the combination of housing 240,intermediate gas distribution plate 260 and gas distribution plate 241form a first plenum 242 above intermediate gas distribution plate 260and an intermediate plenum 243 between the intermediate gas distributionplate 260 and the gas distribution plate 241, as shown in FIG. 3. Thegas distribution system 200 is configured to receive and provide a filmforming composition into the first plenum 242 from a film formingcomposition delivery system 230 and distribute the film formingcomposition in a process space 233 of the process chamber. For example,the gas distribution system 200 can be coupled to the film formingcomposition delivery system 230 using a first gas supply line 231configured to provide one or more constituents of a film formingcomposition 232 and a second supply line 235 configured to provide anoptional initiator 234 into first plenum 242 from the film formingcomposition delivery system 230. The one or more constituents of thefilm forming composition 232 and the optional initiator 234 may beintroduced to first plenum 242 separately as shown, or they may beintroduced through the same supply line.

Furthermore, the gas distribution system 200 comprises a heat sourcehaving one or more heating elements 252 coupled to a power source 250.The one or more heating elements 252 are disposed on at least oneinterior surface of the gas distribution system 200, such that they mayinteract with any constituent of the film forming composition or theoptional initiator or both. For example, the one or more heatingelements 252 may be formed on an upper surface of the intermediate gasdistribution plate 260. The one or more heating elements 252 may beformed in a serpentine-like path, or a spiral-like path, or anyarbitrary shape. Additionally, for example, the one or more heatingelements 252 can comprise one or more resistive heating elements. Whenthe power source 250 couples electrical power to the one or more heatingelements 252, the one or more heating elements 252 may be elevated to atemperature sufficient to pyrolize one or more constituents of the filmforming composition. Power source 250 may include a direct current (DC)power source, or it may include an alternating current (AC) powersource.

The intermediate gas distribution plate 260 comprises a plurality ofintermediate openings 262 arranged to distribute and introduce the filmforming composition to the intermediate plenum 243. Additionally, thegas distribution plate 241 comprises a plurality of openings 244arranged to introduce and distribute the film forming composition fromthe intermediate plenum 243 to the process space 233 proximate asubstrate (not shown) upon which a film is to be formed. For example,gas distribution plate 241 comprises a lower surface 246 configured toface the upper surface of a substrate. The intermediate openings 262 inintermediate gas distribution plate 260 may or may not be aligned withthe openings 244 in gas distribution plate 241.

Although the film forming composition is shown in FIG. 3 to beintroduced to the first plenum 242, any constituent of the film formingcomposition may be introduced directly to the intermediate plenum 243 inorder to avoid or reduce interaction with the one or more heatingelements 252 disposed in first plenum 242. For example, the initiatormay be introduced to first plenum 242 in order to interact with the oneor more heating elements 252 and undergo pyrolysis, while the remainingconstituents of the film forming composition can be introduced to theintermediate plenum 243.

The one or more openings 244 formed in gas distribution plate 241 andthe plurality of intermediate openings 262 formed in the intermediategas distribution plate 260 can be arranged, distributed or sized asdescribed above. When the one or more heating elements 252 are disposedon the upper surface of the intermediate gas distribution plate 260,each heating element can be positioned such that it does not overlapwith an opening, or it can be positioned such that it does overlap withan opening and the opening is formed there through.

As described above, the one or more heating elements 252 are disposed onat least one interior surface of the gas distribution system 200, suchthat they may interact with any constituent of the film formingcomposition, or all of the constituents of the film forming compositionincluding the optional initiator. An interior surface on the gasdistribution system 200 can include any surface on the gas distributionsystem 200. As shown in FIG. 3, an interior surface can include theupper surface of intermediate gas distribution plate 260. However, theinterior surface can further include a surface on housing 240 or withinfirst plenum 242 that interacts with the film forming composition, or asurface within intermediate plenum 243 that interacts with the filmforming composition, or an internal surface of the inlet lines thatprovide the film forming composition 232 and the optional initiator 234into first plenum 242. Additionally, the interior surface can includethe lower surface of intermediate gas distribution plate 260, a surfaceof the plurality of intermediate openings 262 formed in intermediate gasdistribution plate 260, the upper surface of the gas distribution plate241, the lower surface of the gas distribution plate 241, or a surfaceof the plurality of openings 244 formed in gas distribution plate 241,or a combination of two or more thereof. Furthermore, the one or moreheating elements can be formed within any component of the gasdistribution system 200 including, for example, the housing 240, the gasdistribution plate 241 and the intermediate gas distribution plate 260.

Referring now to FIG. 4A, a gas distribution system 300 is illustratedaccording to another embodiment. The gas distribution system 300comprises a housing 340 configured to be coupled to or within a processchamber of a deposition system (such as process chamber 10 of depositionsystem (1, 1′) in FIGS. 1A and 1B), and a gas distribution plate 341configured to be coupled to the housing 340. The gas distribution system300 may be thermally insulated from the process chamber, or it may notbe thermally insulated from the process chamber. Additionally, gasdistribution system 300 comprises an intermediate gas distribution plate360 coupled to housing 340 such that the combination of housing 340,intermediate gas distribution plate 360 and gas distribution plate 341form a first plenum 342 above intermediate gas distribution plate 360and an intermediate plenum 343 between the intermediate gas distributionplate 360 and the gas distribution plate 341, as shown in FIG. 4A. Thegas distribution system 300 is configured to receive and provide a filmforming composition into the first plenum 342 from a film formingcomposition delivery system 330 and distribute the film formingcomposition in a process space 333 of the process chamber. For example,the gas distribution system 300 can be can be coupled to the filmforming composition delivery system 330 using a first gas supply line331 configured to provide one or more constituents of a film formingcomposition 332 and a second supply line 335 configured to provide anoptional initiator 334 into first plenum 342 from the film formingcomposition delivery system 330. The one or more constituents 332 of thefilm forming composition and the optional initiator 334 may beintroduced to first plenum 342 separately as shown, or they may beintroduced through the same supply line.

Furthermore, the gas distribution system 300 comprises a heat sourcehaving one or more heating elements 352 coupled to a power source 350.The one or more heating elements 352 are disposed on at least oneinterior surface of the gas distribution system 300, such that they mayinteract with the film forming composition. For example, the one or moreheating elements 352 may be formed on an upper surface of the gasdistribution plate 341. The one or more heating elements 352 may beformed in a serpentine-like path, or a spiral-like path, or anyarbitrary shape. Additionally, for example, the one or more heatingelements 352 can comprise one or more resistive heating elements. Whenthe power source 350 couples electrical power to the one or more heatingelements 352, the one or more heating elements 352 may be elevated to atemperature sufficient to pyrolize one or more constituents of the filmforming composition. Power source 350 may include a direct current (DC)power source, or it may include an alternating current (AC) powersource.

The intermediate gas distribution plate 360 comprises a plurality ofintermediate openings 362 arranged to distribute and introduce the filmforming composition to the intermediate plenum 343. Additionally, thegas distribution plate 341 comprises a plurality of openings 344arranged to introduce and distribute the film forming composition fromthe intermediate plenum 343 to the process space 333 proximate asubstrate (not shown) upon which a film is to be formed. For example,gas distribution plate 341 comprises a lower surface 346 configured toface the upper surface of a substrate. The intermediate openings 362 inintermediate gas distribution plate 360 may be arranged such that theflow of the film forming composition to intermediate plenum 343 impingesupon the one or more heating elements 352 as shown in FIG. 4A.

The plurality of openings 344 formed in gas distribution plate 341 andthe plurality of intermediate openings 362 formed in the intermediategas distribution plate 360 can be arranged, distributed or sized asdescribed above. When the one or more heating elements 352 are disposedon the upper surface of the gas distribution plate 341, each heatingelement can be positioned such that it does not overlap with an opening,or it can be positioned such that it does overlap with an opening andthe opening is formed there through.

As described above, the one or more heating elements 352 are disposed onat least one interior surface of the gas distribution system 300, suchthat they may interact with any constituent of the film formingcomposition, or all of the constituents of the film forming compositionincluding the optional initiator. An interior surface on the gasdistribution system 300 can include any surface on the gas distributionsystem 300. As shown in FIG. 4A, an interior surface can include theupper surface of gas distribution plate 341. However, as illustrated inFIG. 4B, a gas distribution system 300′ can comprise one or more heatingelements 352′ coupled to the lower surface of the intermediate gasdistribution plate 360. Additionally, the interior surface can include asurface of the plurality of intermediate openings 362 formed inintermediate gas distribution plate 360, the upper surface of the gasdistribution plate 341, the lower surface of the gas distribution plate341, or a surface of the plurality of openings 344 formed in gasdistribution plate 341, or a combination of two or more thereof.Furthermore, the one or more heating elements can be formed within anycomponent of the gas distribution system 300 including, for example, thehousing 340, the gas distribution plate 341 and the intermediate gasdistribution plate 360.

Referring now to FIG. 5, a gas distribution system 400 is illustratedaccording to another embodiment. The gas distribution system 400comprises a housing 440 configured to be coupled to or within a processchamber of a deposition system (such as process chamber 10 of depositionsystem (1, 1′) in FIGS. 1A and 1B), and a multi-component gasdistribution plate 441 configured to be coupled to the housing 440. Thegas distribution system 400 may be thermally insulated from the processchamber, or it may not be thermally insulated from the process chamber.The multi-component gas distribution plate 441 can be coupled to a filmforming composition delivery system 430 using a first supply line 431configured to independently couple a first composition 432 to a firstplenum 442 and distribute the first composition 432 through a firstarray of openings 448 to a process space 433, and a second supply line435 configured to independently couple a second composition 434 to asecond plenum 443 and distribute the second composition 434 through asecond array of openings 444 to the process space 433 without mixing thefirst composition 432 and the second composition 434 prior to theprocess space 433. The first array of openings 448 and the second arrayof openings 444 can be arranged, distributed or sized as describedabove.

Furthermore, the gas distribution system 400 comprises a heat sourcehaving one or more heating elements 452 coupled to a power source 450.The one or more heating elements 452 are disposed on at least oneinterior surface of the gas distribution system 400, such that they mayinteract with the second composition 434 in the second plenum 443. Forexample, as illustrated in FIG. 5, the one or more heating elements 452may be formed on an upper surface of the second plenum 443. The one ormore heating elements 452 may be formed in a serpentine-like path, or aspiral-like path, or any arbitrary shape. Alternatively, for example, asillustrated in FIG. 6 in gas distribution system 400′, the one or moreheating elements 452′ may be formed on a lower surface of the secondplenum 443 surrounding the second array of openings 444. The one or moreheating elements 452′ may be formed in a serpentine-like path, or aspiral-like path, or any arbitrary shape, and the one or more openingsmay be formed there through. Additionally, for example, the one or moreheating elements 452, 452′ can comprise one or more resistive heatingelements. When the power source 450 couples electrical power to the oneor more heating elements 452, the one or more heating elements 452 maybe elevated to a temperature sufficient to pyrolize one or moreconstituents of the second composition 434. Power source 450 may includea direct current (DC) power source, or it may include an alternatingcurrent (AC) power source.

The first composition 432 can include one or more constituents of thefilm forming composition wherein interaction with the heat generated bypower source 450 is not desired. Additionally, the second composition434 can include one or more constituents of the film forming compositionwherein interaction with the heat generated by power source 450 isdesired. For example, the first composition 432 can include one or morefilm forming gases and the second composition 434 can include aninitiator. While the one or more film forming gases are introduced toprocess space 433, the initiator undergoes pyrolysis prior tointroduction to process space 433. Once the one or more film forminggases and the initiator radicals interact in process space 433, theinitiator radicals can catalyze the dissociation of at least oneconstituent of the one or more film forming gases.

As described above, the one or more heating elements 452, 452′ aredisposed on at least one interior surface of the gas distribution system400, 400′, such that they may interact with any constituent of the filmforming composition, or all of the constituents of the film formingcomposition including the optional initiator. An interior surface on thegas distribution system 400, 400′ can include any surface on the gasdistribution system 400, 400′. As shown in FIG. 5, an interior surfacecan include the upper surface of the second plenum 443. As shown in FIG.6, an interior surface can include the lower surface of the secondplenum 443. However, the interior surface can further include a surfaceon housing 440 or within first plenum 442 that interacts with the firstcomposition 432, or any surface within second plenum 443 that interactswith the second composition 434, or an internal surface of the inletlines that provide the first composition 432 and the second composition434 into first plenum 442 and second plenum 443. Additionally, theinterior surface can include the upper surface of multi-component gasdistribution plate 441, a surface of the first array of openings 448, asurface of the second array of openings 444, or the lower surface of themulti-component gas distribution plate 441, or a combination of two ormore thereof. Furthermore, the one or more heating elements can beformed within any component of the gas distribution system 400, 400′including, for example, the housing 440 and the multi-component gasdistribution plate 441.

Referring now to FIG. 9, a gas distribution system 900 is illustratedaccording to an embodiment. The gas distribution system 900 comprises ahousing 940 configured to be coupled to or within a process chamber of adeposition system (such as process chamber 10 of deposition system (1,1′) in FIGS. 1A and 1B), and a gas distribution plate 941 configured tobe coupled to the housing 940, wherein the combination form a plenum942. The gas distribution system 900 may be thermally insulated from theprocess chamber, or it may not be thermally insulated from the processchamber.

The gas distribution system 900 is configured to receive and provide afilm forming composition or process gas into the plenum 942 from a filmforming composition delivery system 930 and distribute the film formingcomposition in a process space 933 of the process chamber. For example,the gas distribution system 900 can be coupled to the film formingcomposition delivery system 930 using a first supply line 931 configuredto provide one or more constituents of a film forming composition 932,such as a chemical precursor, and a second supply line 935 configured toprovide an optional inert gas 934 into plenum 942 from the film formingcomposition delivery system 930. The one or more constituents of thefilm forming composition 932 and the optional inert gas 934 may beintroduced to plenum 942 separately as shown, or they may be introducedthrough the same supply line.

The gas distribution plate 941 comprises a plurality of openings 944arranged to introduce and distribute the film forming composition fromplenum 942 to the process space 933 proximate a substrate (not shown)upon which a film is to be formed. For example, gas distribution plate941 comprises an outlet 946 configured to face the upper surface of asubstrate. Furthermore, for example, the gas distribution plate 941 mayinclude gas showerhead.

Furthermore, the gas distribution system 900 comprises a gas heatingdevice 950 having one or more heating elements 952 coupled to a powersource 954 and configured to receive an electrical current from thepower source 954. The one or more heating elements 952 are located atthe outlet 946 of the gas distribution system 900, such that they mayinteract with any constituent of the film forming composition, or all ofthe constituents of the film forming composition.

For example, the one or more heating elements 952 can comprise one ormore resistive heating elements. Additionally, for example, the one ormore heating elements 952 may include a metal-containing ribbon or ametal-containing wire. Furthermore, for example, the one or more heatingelements 952 can be composed of a resistive metal, a resistive metalalloy, a resistive metal nitride, or a combination of two or morethereof.

When the power source 954 couples electrical power to the one or moreheating elements 952, the one or more heating elements 952 may beelevated to a temperature sufficient to pyrolize one or moreconstituents of the film forming composition. Power source 954 mayinclude a direct current (DC) power source, or it may include analternating current (AC) power source. Power source 954 may beconfigured to couple electrical power to the one or more heatingelements 952 through a direct electrical connection to the one or moreheating elements 952. Alternatively, power source 954 may be configuredto couple electrical power to the one or more heating elements 952through induction.

The one or more openings 944 formed in gas distribution plate 941 caninclude one or more orifices, one or more nozzles, or one or more slots,or a combination thereof. The one or more openings 944 can include aplurality of orifices distributed on the gas distribution plate 941 in arectilinear pattern. Alternatively, the one or more openings 944 caninclude a plurality of orifices distributed on the gas distributionplate 941 in a circular pattern (e.g., orifices are distributed in aradial direction or angular direction or both). When the one or moreheating elements 952 are located at the outlet 946 of the gasdistribution system 900, each heating element can be positioned suchthat the flow of film forming composition exiting from the one or moreopenings 944 of gas distribution plate 941 pass by or over each heatingelement.

Additionally, the plurality of openings 944 can be distributed invarious density patterns on the gas distribution plate 941. For example,more openings can be formed near the center of the gas distributionplate 941 and less openings can be formed near the periphery of the gasdistribution plate 941. Alternatively, for example, more openings can beformed near the periphery of the gas distribution plate 941 and lessopenings can be formed near the center of the gas distribution plate941. Additionally yet, the size of the openings can vary on the gasdistribution plate 941. For example, larger openings can be formed nearthe center of the gas distribution plate 941 and smaller openings can beformed near the periphery of the gas distribution plate 941.Alternatively, for example, smaller openings can be formed near theperiphery of the gas distribution plate 941 and larger openings can beformed near the center of the gas distribution plate 941.

Referring still to FIG. 9, the gas distribution system 900 may comprisean optional intermediate gas distribution plate 960 coupled to housing940 such that the combination of housing 940, intermediate gasdistribution plate 960 and gas distribution plate 941 form anintermediate plenum 945 separate from plenum 942 and between theintermediate gas distribution plate 960 and the gas distribution plate941. The gas distribution system 900 is configured to receive a filmforming composition into the plenum 942 from a film forming compositiondelivery system (not shown) and distribute the film forming compositionthrough the intermediate plenum 945 to the process space 933 of theprocess chamber.

The intermediate gas distribution plate 960 comprises a plurality ofopenings 962 arranged to distribute and introduce the film formingcomposition to the intermediate plenum 945. The plurality of openings962 can be shaped, arranged, distributed or sized as described above.

In alternative embodiments, the gas distribution system may include agas ring, a gas nozzle, an array of gas nozzles, or combinationsthereof.

Referring now to FIG. 8A, a top view of a gas heating device 800 ispresented according to an embodiment. The gas heating device 800 isconfigured to heat one or more constituents of a film formingcomposition. The gas heating device 800 comprises one or more heatsources 820, wherein each heat source 820 comprises a resistive heatingelement 830 configured to receive an electrical current from one or morepower sources. Additionally, the gas heating device 800 comprises amounting structure 810 configured to support the one or more resistiveheating elements 830. Furthermore, the one or more heat sources 820 maybe mounted between the mounting structure 810 and an auxiliary mountingstructure 812 (see FIGS. 8C and 8D).

As shown in FIG. 8A, the gas heating device 800 comprises one or morestatic mounting devices 826 coupled to the mounting structure 810 andconfigured to fixedly couple the one or more resistive heating elements830 to the mounting structure 810, and the gas heating device 800comprises one or more dynamic mounting devices 824 coupled to themounting structure 810 and configured to automatically compensate forchanges in a length of each of the one or more resistive heatingelements 830. Further yet, the one or more dynamic mounting devices 824may substantially reduce slippage between the one or more resistiveheating elements 830 and the one or more dynamic mounting devices 824.

The one or more resistive heating elements 830 may be electricallycoupled in series, as shown in FIG. 8A, using electrical interconnects842, wherein electrical current is supplied to the serial connection ofone or more resistive heating elements 830 via, for example, connectionof a first terminal 841 to the power source and a second terminal 844 toelectrical ground for the power source. Alternatively, the one or moreresistive heating elements 830 may be electrically coupled in parallel.

Referring now to FIG. 8B, a top view of a gas heating device 800′ ispresented according to another embodiment. The gas heating device 800′can be similar to the embodiment of FIG. 8A, and can further comprise aplurality of heating element zones 840 (A-C), each of which iselectrically independent of one another. Each of the plurality ofheating element zones 840 (A-C) comprises one or more heat sources 820,wherein each heat source 820 comprises resistive heating element 830configured to receive an electrical current from one or more powersources.

The one or more resistive heating elements 830 may be electricallycoupled in series, as shown in FIG. 8B, using electrical interconnects842, wherein electrical current is supplied to the serial connection ofone or more resistive heating elements 830 via, for example, connectionof a first terminal 841 (A-C) to the power source and a second terminal844 (A-C) to electrical ground for the power source. Alternatively, theone or more resistive heating elements 830 may be electrically coupledin parallel.

Referring now to FIGS. 8C and 8D, a top view and a side view of heatsource 820, respectively, is presented according to an embodiment. Theresistive heating element 830 comprises a first end 834 fixedly coupledto one of the one or more static mounting devices 826, a second end 836fixedly coupled to one of the one or more static mounting devices 826, abend 833 coupled to one of the one or more dynamic mounting devices 824and located between the first end 834 and the second end 836, a firststraight section 832 extending between the first end 834 and the bend833, and a second straight section 831 extending between the second end836 and the bend 833. The first end 834 and the second end 836 may befixedly coupled to the same static mounting device or different staticmounting devices.

As illustrated in FIGS. 8C and 8D, the first straight section 832 andthe second straight section 831 may be substantially the same length.When the first straight section 832 and the second straight section 831are substantially the same length, the respective changes in length forthe first straight section 832 and the second straight section 831 dueto temperature variations are substantially the same. Alternatively, thefirst straight section 832 and the second straight section 831 may bedifferent lengths.

Also, as illustrated in FIGS. 8C and 8D, the bend 833 comprises a 180degree bend. Alternatively, the bend 833 comprises a bend ranging fromgreater than 0 degrees to less than 360 degrees.

The static mounting device 826 is fixedly coupled to the mountingstructure 810. The dynamic mounting device 824 is configured to adjustin a linear direction 825 parallel with the first straight section 832and the second straight section 831 in order to compensate for changesin the length of the first straight section 832 and the length of thesecond straight section 831. In this embodiment, the dynamic mountingdevice 824 can alleviate slack or sagging in the resistive heatingelement 830, and it may substantially reduce or minimize slippagebetween the resistive heating element 830 and the dynamic mountingdevice 824 (such slippage may cause particle generation and/orcontamination). Furthermore, the dynamic mounting device 824 comprises athermal break 827 configured to reduce heat transfer between the dynamicmounting device 824 and the mounting structure 810.

Although, the gas distribution systems shown in FIGS. 2 through 5, andFIG. 9 illustrate a single zone, the gas distribution systems can bemultiple zones. For example, the gas distribution system can beconfigured to alter the amount of film forming composition introducednear the center of the substrate relative to the amount of film formingcomposition introduced near the edge of the substrate.

Additionally, although the gas distribution systems shown in FIGS. 1through 5, and FIG. 9 illustrate the processing of a substrate orientedin a horizontal plane, the gas distribution system can be configured todistribute a film forming composition to a substrate oriented in avertical plane. Furthermore, although the gas distribution systems shownin FIGS. 1 through 5, and FIG. 9 illustrate the processing of asubstrate, the gas distribution system can be configured to distribute afilm forming composition to a plurality of substrates. For example, aplurality of substrates can be oriented in a horizontal plane, or theplurality of substrate can be arranged parallel to one another in avertical direction.

According to one embodiment, the one or more heating elements comprise aresistive heating element. According to another embodiment, the one ormore heating elements comprise a resistive film heating element.According to another embodiment, the one or more heating elementscomprise a heating element that is thermally insulated from the gasdistribution system. According to another embodiment, the one or moreheating elements comprise a heating element in thermal contact with thegas distribution system. According to another embodiment, the one ormore heating elements are coupled to at least one interior surface ofthe gas distribution system. According to yet another embodiment, theone or more heating elements are embedded within the gas distributionsystem.

Referring now to FIG. 7, a cross-sectional view of a heating element isprovided according to another embodiment. A multi-layer resistive filmheating element 600 is shown comprising an insulation layer 620 formedon a component 610 having a surface exposed to the interior of a gasdistribution system, a resistive heating layer 630 formed on theinsulation layer 620, and a protective layer 640 formed on the resistiveheating layer 630. For example, component 610 can include a gasdistribution plate as described above.

The resistive heating layer 630 can comprise a resistive metal orresistive metal alloy. For example, the resistive heating layer 630 cancomprise tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminumnitride, etc. Examples of commercially available materials to fabricateresistive heating layers include Kanthal, Nikrothal, Akrothal, which areregistered trademark names for metal alloys produced by KanthalCorporation of Bethel, Conn. The Kanthal family includes ferritic alloys(FeCrAl) and the Nikrothal family includes austenitic alloys (NiCr,NiCrFe). The resistive heating layer 630 can be formed as a thick filmusing, for example, spray coating techniques, screen printingtechniques, etc. For example, the thick film resistive heating layer 630can be formed according to techniques commercially provided by Watlow(1310 Kingsland Dr., Batavia, Ill., 60510).

The insulation layer 620 can include a ceramic, plastic or polymer. Forexample, the insulation layer 620 can include quartz, silicon nitride,sapphire, or alumina, etc. Additionally, the protective layer 640 caninclude a ceramic, plastic, or polymer. For example, the protectivelayer 640 can include a spray coating, thermal spray coating or a plasmaspray coating of a ceramic material applied over the resistive heatinglayer 630.

Alternatively, a heating element can include a cartridge heater, acast-in heater, a flexible heater, etc. commercially available fromWatlow (1310 Kingsland Dr., Batavia, Ill., 60510).

Referring again to FIGS. 1A and 1B, the power source 50 is configured toprovide electrical power to the one or more resistive film heatingelements in the gas distribution system 40. For example, the powersource 50 can be configured to deliver either DC power or AC power.Additionally, for example, the power source 50 can be configured tomodulate the amplitude of the power, or pulse the power. Furthermore,for example, the power source 50 can be configured to perform at leastone of setting, monitoring, adjusting or controlling a power, a voltage,or a current.

Referring still to FIGS. 1A and 1B, a temperature control system 22 canbe coupled to the gas distribution system 40, the heat source 45, theprocess chamber 10 and/or the substrate holder 20, and configured tocontrol the temperature of one or more of these components. Thetemperature control system 22 can include a temperature measurementsystem configured to measure the temperature of the gas distributionsystem 40 at one or more locations, the temperature of the heat source45 at one or more locations, the temperature of the process chamber 10at one or more locations and/or the temperature of the substrate holder20 at one or more locations. The measurements of temperature can be usedto adjust or control the temperature at one or more locations indeposition system (1, 1′).

The temperature measuring device, utilized by the temperaturemeasurement system, can include an optical fiber thermometer, an opticalpyrometer, a band-edge temperature measurement system as described inpending U.S. patent application Ser. No. 10/168,544, filed on Jul. 2,2002, the contents of which are incorporated herein by reference intheir entirety, or a thermocouple such as a K-type thermocouple.Examples of optical thermometers include: an optical fiber thermometercommercially available from Advanced Energies, Inc., Model No. OR2000F;an optical fiber thermometer commercially available from LuxtronCorporation, Model No. M600; or an optical fiber thermometercommercially available from Takaoka Electric Mfg., Model No. FT-1420.

Alternatively, when measuring the temperature of one or more resistiveheating elements, the electrical characteristics of each resistiveheating element can be measured. For example, two or more of thevoltage, current or power coupled to the one or more resistive heatingelements can be monitored in order to measure the resistance of eachresistive heating element. The variations of the element resistance canarise due to variations in temperature of the element which affects theelement resistivity.

According to program instructions from the temperature control system 22or the controller 80 or both, the power source 50 can be configured tooperate the heat source 45, e.g., the one or more heating elements, at atemperature ranging from approximately 100 degrees C. to approximately1500 degrees C. For example, the temperature can range fromapproximately 200 degrees C. to approximately 700 degrees C., orapproximately 600 degrees C. to approximately 1100 degrees C. Thetemperature can be selected based upon the film forming composition and,more particularly, the temperature can be selected based upon aconstituent of the film forming composition.

Additionally, according to program instructions from the temperaturecontrol system 22 or the controller 80 or both, the temperature of thegas distribution system 40 can be set to a value approximately equal toor less than the temperature of the heat source 45, i.e., the one ormore heating elements. For example, the temperature can be a value lessthan or equal to approximately 600 degrees C. Additionally, for example,the temperature can be a value less than approximately 550 degrees C.Further yet, for example, the temperature can range from approximately80 degrees C. to approximately 550 degrees C. The temperature can beselected to be approximately equal to or less than the temperature ofthe one or more heating elements, and to be sufficiently high to preventcondensation which may or may not cause film formation on surfaces ofthe gas distribution system and reduce the accumulation of residue.

Additionally yet, according to program instructions from the temperaturecontrol system 22 or the controller 80 or both, the temperature of theprocess chamber 10 can be set to a value less than the temperature ofthe heat source 45, i.e., the one or more heating elements. For example,the temperature can be a value less than approximately 200 degrees C.Additionally, for example, the temperature can be a value less thanapproximately 150 degrees C. Further yet, for example, the temperaturecan range from approximately 80 degrees C. to approximately 150 degreesC. However, the temperature may be the same or less than the temperatureof the gas distribution system 40. The temperature can be selected to beless than the temperature of the one or more resistive film heatingelements, and to be sufficiently high to prevent condensation which mayor may not cause film formation on surfaces of the process chamber andreduce the accumulation of residue.

Once film forming composition enters the process space 33, the filmforming composition adsorbs on the substrate surface, and film formingreactions proceed to produce a thin film on the substrate 25. Accordingto program instructions from the temperature control system 22 or thecontroller 80 or both, the substrate holder 20 is configured to set thetemperature of substrate 25 to a value less than the temperature of theheat source 45, the temperature of the gas distribution system 40, andthe process chamber 10. For example, the substrate temperature can rangeup to approximately 80 degrees C. Additionally, the substratetemperature can be approximately room temperature. For example, thesubstrate temperature can range up to approximately 25 degrees C.However, the temperature may be less than or greater than roomtemperature.

The substrate holder 20 comprises one or more temperature controlelements coupled to the temperature control system 22. The temperaturecontrol system 22 can include a substrate heating system, or a substratecooling system, or both. For example, substrate holder 20 can include asubstrate heating element or substrate cooling element (not shown)beneath the surface of the substrate holder 20. For instance, theheating system or cooling system can include a re-circulating fluid flowthat receives heat from substrate holder 20 and transfers heat to a heatexchanger system (not shown) when cooling, or transfers heat from theheat exchanger system to the substrate holder 20 when heating. Thecooling system or heating system may include heating/cooling elements,such as resistive heating elements, or thermo-electric heaters/coolerslocated within substrate holder 20. Additionally, the heating elementsor cooling elements or both can be arranged in more than one separatelycontrolled temperature zone. The substrate holder 20 may have twothermal zones, including an inner zone and an outer zone. Thetemperatures of the zones may be controlled by heating or cooling thesubstrate holder thermal zones separately.

Additionally, the substrate holder 20 comprises a substrate clampingsystem (e.g., electrical or mechanical clamping system) to clamp thesubstrate 25 to the upper surface of substrate holder 20. For example,substrate holder 20 may include an electrostatic chuck (ESC).

Furthermore, the substrate holder 20 can facilitate the delivery of heattransfer gas to the back-side of substrate 25 via a backside gas supplysystem to improve the gas-gap thermal conductance between substrate 25and substrate holder 20. Such a system can be utilized when temperaturecontrol of the substrate is required at elevated or reducedtemperatures. For example, the backside gas system can comprise atwo-zone gas distribution system, wherein the backside gas (e.g.,helium) pressure can be independently varied between the center and theedge of substrate 25.

Vacuum pumping system 60 can include a turbo-molecular vacuum pump (TMP)capable of a pumping speed up to approximately 5000 liters per second(and greater) and a gate valve for throttling the chamber pressure. Forexample, a 1000 to 3000 liter per second TMP can be employed. TMPs canbe used for low pressure processing, typically less than approximately 1Torr. For high pressure processing (i.e., greater than approximately 1Torr), a mechanical booster pump and dry roughing pump can be used.Furthermore, a device for monitoring chamber pressure (not shown) can becoupled to the process chamber 10. The pressure measuring device can be,for example, a Type 628B Baratron absolute capacitance manometercommercially available from MKS Instruments, Inc. (Andover, Mass.).

As shown in FIGS. 1A and 1B, the deposition system (1, 1′) may furtherinclude a remote source 70 for introducing one or more additives before,during, and/or after the introducing of the film forming composition.The one or more additives may be used to pre-treat a surface on thesubstrate 25, post-treat a surface on the substrate 25, or assist thefilm forming reactions on a surface of the substrate 25. The remotesource 70 may include a remote plasma generator, a remote radicalgenerator, a remote ozone generator, or a remote water vapor generator,or any combination of two or more thereof. For example, the remotesource 70 may produce a reactive composition configured to alter theexisting surface functionality of a substrate surface, create a newsurface functionality at a substrate surface, improve adhesion at asubstrate surface for a subsequent layer, hydrolyze a substrate surface,alter the film-forming chemistry at a substrate surface, etc.

The reactive composition may include atomic species, molecular species,excited species, metastable species, dissociated species, radicalspecies, ionized species, etc. The reactive composition may include anoxygen-containing environment (e.g., exposure to oxygen-containingplasma, oxygen-containing radical, atomic oxygen, diatomic oxygen,excited oxygen, ionized oxygen, ozone, etc.), a hydrogen-containingenvironment (e.g., exposure to hydrogen-containing plasma,hydrogen-containing radical, atomic hydrogen, diatomic hydrogen, excitedhydrogen, metastable hydrogen, ionized hydrogen, etc.), anitrogen-containing environment (e.g., exposure to nitrogen-containingplasma, nitrogen-containing radical, atomic nitrogen, diatomic nitrogen,excited nitrogen, metastable nitrogen, ionized nitrogen, etc.), aperoxide, a water vapor environment (e.g., water vapor, hydroxylradical, hydroxide ion, atomic hydrogen, excited hydrogen, metastablehydrogen, ionized hydrogen, etc.), etc. For example, the remote source70 may be configured to supply an oxygen-containing additive, such asionized oxygen, to the deposition system (1, 1′) during the introductionof the film forming composition.

As an example, the remote plasma generator may include an upstreamplasma source configured to generate the reactive composition. Theremote plasma generator may include an ASTRON® reactive gas generator,commercially available from MKS Instruments, Inc., ASTeX® Products (90Industrial Way, Wilmington, Mass. 01887).

As shown in FIG. 1A, a gas injection system 72 may be coupled to anoutlet of the remote source 70, and configured to introduce the reactivecomposition to the process chamber 10 within a plane above the substrate25 and below the one or more heating elements 55. Furthermore, the gasinjection system 72 comprises a plurality of gas nozzles arranged in theprocess chamber 10 beyond a peripheral edge of the one or more heatingelements 55.

The deposition system (1, 1′) may include a first gas line 74A couplingan outlet of the remote source 70 to the gas injection system 72 througha first gas valve 75A to permit a first flow of the reactive compositionto the process chamber 10, and a second gas line 74B coupling the outletof the remote source 70 to the duct 62 through a second gas valve 75B topermit a second flow of the reactive composition to the vacuum pumpingsystem without passing through the process chamber 10.

Alternatively, as shown in FIG. 1B, a gas injection system 72′ comprisesa gas injection ring having a plurality of gas nozzles, wherein the gasinjection ring may be arranged in the process chamber 10 above thesubstrate 25 and below the one or more heating elements 55. Furthermore,the gas injection system 72′ comprises a gas injection ring arranged inthe process chamber 10 beyond a peripheral edge of the one or moreheating elements 55.

Referring still to FIGS. 1A and 1B, the deposition system (1, 1′) canfurther comprise a controller 80 that comprises a microprocessor,memory, and a digital I/O port capable of generating control voltagessufficient to communicate and activate inputs to deposition system (1,1′) as well as monitor outputs from deposition system (1, 1′). Moreover,controller 80 can be coupled to and can exchange information with theprocess chamber 10, the substrate holder 20, the temperature controlsystem 22, the film forming composition delivery system 30, the gasdistribution system 40, the heat source 45, the vacuum pumping system60, and the remote source 70, as well as the backside gas deliverysystem (not shown), and/or the electrostatic clamping system (notshown). A program stored in the memory can be utilized to activate theinputs to the aforementioned components of deposition system (1, 1′)according to a process recipe in order to perform the method ofdepositing a thin film.

Controller 80 may be locally located relative to the deposition system(1, 1′), or it may be remotely located relative to the deposition system(1, 1′) via an internet or intranet. Thus, controller 80 can exchangedata with the deposition system (1, 1′) using at least one of a directconnection, an intranet, or the internet. Controller 80 may be coupledto an intranet at a customer site (i.e., a device maker, etc.), orcoupled to an intranet at a vendor site (i.e., an equipmentmanufacturer). Furthermore, another computer (i.e., controller, server,etc.) can access controller 80 to exchange data via at least one of adirect connection, an intranet, or the internet.

Additionally, the deposition system (1, 1′) can be periodically cleanedusing an in-situ cleaning system (not shown) coupled to, for example,the process chamber 10 or the gas distribution system 40. The remotesource 70 may be utilized to provide a cleaning composition to thedeposition system (1, 1′). Per a frequency determined by the operator,the in-situ cleaning system can perform routine cleanings of thedeposition system (1, 1′) in order to remove accumulated residue oninternal surfaces of deposition system (1, 1′). The in-situ cleaningsystem can, for example, comprise a radical generator configured tointroduce chemical radical capable of chemically reacting and removingsuch residue. Additionally, for example, the in-situ cleaning systemcan, for example, include an ozone generator configured to introduce apartial pressure of ozone. For instance, the radical generator caninclude an upstream plasma source configured to generate oxygen orfluorine radical from oxygen (O₂), nitrogen trifluoride (NF₃), O₃, XeF₂,ClF₃, or C₃F₈ (or, more generally, C_(x)F_(y)), respectively. Theradical generator can include an ASTRON® reactive gas generator,commercially available from MKS Instruments, Inc., ASTeX® Products (90Industrial Way, Wilmington, Mass. 01887).

FIG. 10 illustrates a method of depositing a thin film on a substrateaccording to another embodiment. The method 1000 includes, at 1010,providing a substrate in a process chamber of a deposition system. Forexample, the deposition system can include the deposition systemdescribed above in FIGS. 1A and 1B. The substrate can, for example, be aSi substrate. A Si substrate can be of n- or p-type, depending on thetype of device being formed. The substrate can be of any size, forexample a 200 mm substrate, a 300 mm substrate, or an even largersubstrate. According to an embodiment of the invention, the substratecan be a patterned substrate containing one or more vias or trenches, orcombinations thereof.

At 1020, a film forming composition is provided to a gas distributionsystem that is configured to introduce the film forming composition tothe process chamber above the substrate. For example, the gasdistribution system can be located above the substrate and opposing anupper surface of the substrate.

At 1030, one or more constituents of the film forming composition aresubjected to pyrolysis using one or more heating elements, such as oneor more resistive film heating elements, disposed on an interior surfaceof the gas distribution system or embedded within the gas distributionsystem. The gas distribution system can be any one of the systemsdescribed in FIGS. 2 through 5, and FIG. 9 above, or any combinationthereof.

At 1040, the substrate is exposed to the film forming composition tofacilitate the formation of the thin film. The temperature of thesubstrate can be set to a value less than the temperature of the one ormore heating elements, e.g. one or more resistive film heating elements.For example, the temperature of the substrate can be approximately roomtemperature.

Although only certain exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. Accordingly, all such modifications areintended to be included within the scope of this invention.

What is claimed is:
 1. A processing system for treating a substrate,comprising: a process chamber having a pumping system configured toevacuate the process chamber; a substrate holder coupled to the processchamber and configured to support the substrate; a gas distributionsystem coupled to the process chamber and configured to introduce a filmforming composition to a process space in the vicinity of a surface ofthe substrate, wherein the gas distribution system includes a gasdistribution plate having one or more openings formed there through toallow the film forming composition to flow into the process space; and aheat source coupled to the gas distribution system, the heat sourcecomprising one or more heating elements coupled to a power source,wherein the one or more heating elements are disposed on at least aportion of an interior surface of the one or more openings formedthrough the gas distribution plate, and configured to interact with thefilm forming composition and cause pyrolysis of one or more constituentsof the film forming composition when heated.
 2. The system of claim 1,wherein the one or more heating elements are composed of a resistivemetal, a resistive metal alloy, or a resistive metal nitride in the formof a thick film deposited on the interior surface of the one or moreopenings.
 3. The system of claim 1, wherein an insulation layer isdisposed between said one or more heating elements and the surface uponwhich the one or more heating elements are formed.
 4. The system ofclaim 1, wherein a protective layer is formed over said one or moreheating elements.